savantic semiconductor product specification silicon npn power transistors 2sd1267 2SD1267A d escription with to-220fa package high forward current transfer ratio h f e which has satisfactory linearity low collector saturation voltage complement to type 2sb942/942a applications for power amplification pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2sd1267 60 v cbo collector- base voltage 2SD1267A open emitter 80 v 2sd1267 60 v ceo collector-emitter voltage 2SD1267A open base 80 v v ebo emitter-base voltage open collector 5 v i c collector current 4 a i cm collector current-peak 8 a t a =25 2 p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2sd1267 2SD1267A characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2sd1267 60 v (br)ceo collector-emitter breakdown voltage 2SD1267A i c =30ma ,i b =0 80 v v cesat collector-emitter saturation voltage i c =4a, i b =0.4a 1.5 v v be base-emitter voltage i c =3a ; v ce =4v 2.0 v i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma 2sd1267 v ce =30v; i b =0 i ceo collector cut-off current 2SD1267A v ce =60v; i b =0 0.7 ma 2sd1267 v ce =60v; v be =0 i ces collector cut-off current 2SD1267A v ce =80v; v be =0 0.4 ma h fe-1 dc current gain i c =1a ; v ce =4v 70 250 h fe-2 dc current gain i c =3a ; v ce =4v 15 f t transition frequency i c =0.5a; v ce =5v,f=1mhz 20 mhz switching times t on turn-on time 0.4 s t stg storage time 1.5 s t f fall time i c =4a;i b1 =-i b2 =0.4a v cc =50v 0.5 s h fe-1 classifications q p 70-150 120-250
savantic semiconductor product specification 3 silicon npn power transistors 2sd1267 2SD1267A package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2sd1267 2SD1267A
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